LEC CRUCIBLE
INTRODUCTION
Liquid Encapsulated Czochralski (LEC) Technique is used for growing high-purity
non-doped semi-insulating monocrystalline or polycrystalline
which apply to direct ion implanted method.
CHARACTERISTIC
1. Crucible size (max. diameter upto 12 inches and max. height 17 inches)
2. High density (upto 2.19g/cm3).
3. High purity (>99.99%).
4. High cracking resistance (Excellent coefficient of thermal expansion).
PARAMETER
APPLICATION:
LEC crucibles can be used to synthesize semiconductor crystal, Ⅲ-Ⅴ compounds and In-situ synthesis of GaAs, InP and GaP crystals.
VGF CRUCIBLE
INTRODUCTION
Vertical Gradient Freeze (VGF) Technique is used for growing single crystals
widely used in microelectronics and semiconductor industry.
CHARACTERISTIC
1. Crucible size (max. diameter upto 8 inches and max. height 18 inches)
2. High purity (>99.99%)
3. High Durability (Excellent structure between layers)
4. High crystal forming rate. (Forming rate set by anistrophy adustment)
PARAMETER
APPLICATION:
VGF crucibles can be used to synthesize single semiconductor crystal, Ⅲ-Ⅴ compounds by VGF or VB method.
MBE CRUCIBLE
INTRODUCTION
Molecular Beam Epitaxy (MBE) Technique is used to produce
Gallium arsenide epitaxial wafers.
MBE Method enables to produce epitaxial materials with
variety structures such as multiple, multilayer, homogeneous,
heterogeneous, supperlattice, quantum wells and so on.
CHARACTERISTIC
1. Crucible size (max. diameter upto 12 inches and max. height 17 inches)
2. High Density (upto 2.19g/cm3)
3. High purity (>99.99%)
4. High cracking resistance (Excellent coefficient of thermal expansion)
5. Good chemical stability
PARAMETER
APPLICATION:
MBE crucibles can be used to synthesize semiconductor crystal and Ⅲ-Ⅴ compounds by horizontal directional solidification method.
PBN BOAT
INTRODUCTION
Horizontal directional solidification method can be used to synthetize polycrystals.
Directional solidification furnace is divided into 3 zones according to the thermal.
Take gallium arsenide for example. Arsenic element will sublimate in low temperature region
(about 630 ℃), then through the medium temperature region and form polycrystals in
high temperature region with gallium gradually.
PBN boats act the reaction vessel in high temperature region
CHARACTERISTIC
1. Boat size (max. height 17 inches)
2. High Density (upto 2.19g/cm3)
3. High purity (>99.99%)
4. High cracking resistance (Excellent coefficient of thermal expansion)
5. No deformation at high temperature (resist upto 2300℃ at vacuum)
6. Long service lifetime
PARAMETER
APPLICATION:
The product can be used to synthesize crystal, melt and evaporate metal. This PBN product is mainly used for the production of III-V single
-crystal with horizontal directional solidification method.
PBN PLATES
INTRODUCTION
PBN plate can replace conventional insualting materials which requires
superior temperature reisitance, high purity, corrosion resisitance.
CHARACTERISTIC
1. High temperature resistence (2300℃ at vacuum, 2700℃ at ammonia atmosphere)
2. High purity (>99.99%) No gas impurities released at high temp.
3. Good toughness. (equivalent to hexagonal sturcture of graphite)
4. Good insulation at high temp. (volume resistivity: 3.11×1011Ω·cm)
5. Chemical inertness. Good corrosion resistance of acid, alkali and organic solvent.
6. Reduce the heat waste by preventing heat conduction.
PARAMETER
APPLICATION:
These products can be used as insulation pads, gaskets, stents and other materials, which can be used in the field of vacuum, high temperature and MBE equipment.
PBN COATING
INTRODUCTION
PBN coating can protect the graphite matrix effectively.
The coating thickness can be 10 to 500 microns.
CHARACTERISTIC
1. Strong adhesion.
2. Protects the Graphite from corrosion.
3. Prevents the Graphite from carbon release.
4. Insulation.
PARAMETER
APPLICATION:
PBN coatings are used to provide corrosion protection on heater, crucible, and bases.
Other Products
Introduction
The PBN has high temperature insulation resistance. and widely used in the
manufacturing of holders, evaporating dishes, insulation sleeves and
other products.
Characteristic
1. PBN can resist the high temperature of 2300℃ in a vacuum and 2700℃
in ammonia atmosphere.
2. High purity (>99.99%).
3. No release of gas impurities under high temperatures.
4. Good toughness. It is similar to the hexagonal structure of graphite.
5. Good insulation under high temperatures.
6. Chemical inertness. Good corrosion resistance of acid, alkali and organic solvent.
PARAMETER
APPLICATION:
PBN can be used as the insulating sleeve of electrode in the high temperature furnace and clamping rod of traveling-wave tube.
